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Volumn 405, Issue 12, 2010, Pages 2673-2679

Adsorption of oxygen atom on the pristine and antisite defected SiC nanotubes

Author keywords

Adsorption; Density functional theory; Oxygen; SiCNT

Indexed keywords

ADSORPTION DENSITIES; BRIDGE SITES; EXTERIOR SURFACES; FIRST-PRINCIPLES; GENERALIZED GRADIENT APPROXIMATIONS; OXYGEN ADATOMS; OXYGEN ADSORPTION; OXYGEN ATOM; PROJECTOR-AUGMENTED WAVES; SI-C BOND; SI-SI BONDS; SIC NANOTUBES; SINGLE OXYGEN ATOM; STABLE CONFIGURATION;

EID: 77953130149     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.03.053     Document Type: Article
Times cited : (16)

References (35)
  • 5
    • 0003597031 scopus 로고
    • Harris G.L. (Ed), Institution of Electrical Engineers, London edited by
    • Harris G.L. In: Harris G.L. (Ed). Properties of Silicon Carbide (1995), Institution of Electrical Engineers, London edited by
    • (1995) Properties of Silicon Carbide
    • Harris, G.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.