Modified bimodal growth mechanism of pentacene thin films at elevated substrate temperatures

Journal of Physics Condensed Matter

Volumn 22, Issue 26, 2010, Pages

  Guo, Dong ^a,b   Ikeda, Susumu ^b   Saiki, Koichiro ^b  

^a INSTITUTE OF ACOUSTICS   (China)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIMODAL GROWTH; CRYSTALLINITIES; ELEVATED TEMPERATURE; GRAIN GEOMETRY; GRAIN SIZE; GRAZING INCIDENCE X-RAY DIFFRACTION; GROWTH THEORY; IN-PLANE; MONOLAYER MOLECULES; OUT-OF-PLANE; PENTACENE THIN FILMS; SUBMONOLAYER FILMS; SUBSTRATE TEMPERATURE; THREE-DIMENSIONAL GROWTH;

DENDRIMERS; DESORPTION; GRAIN SIZE AND SHAPE; HOLOGRAPHIC INTERFEROMETRY; MONOLAYERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GRAIN GROWTH;

NAPHTHACENE DERIVATIVE; PENTACENE; SILICON DIOXIDE;

ARTICLE; ARTIFICIAL MEMBRANE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; CRYSTALLIZATION; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; TEMPERATURE; X RAY DIFFRACTION;

CRYSTALLIZATION; MEMBRANES, ARTIFICIAL; MICROSCOPY, ATOMIC FORCE; NANOTECHNOLOGY; NAPHTHACENES; PARTICLE SIZE; SILICON DIOXIDE; TEMPERATURE; X-RAY DIFFRACTION;

EID: 77953103326     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/22/26/262001     Document Type: Article

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