Influence of the growth conditions on the stoichiometry and on the optical properties of titanium oxide thin films prepared by reactive sputtering

Thin Solid Films

Volumn 517, Issue 18, 2009, Pages 5415-5418

  Pérez Pacheco, Argelia ^a   Prieto, C ^b   Castaneda Guzman R ^a   Garcia Lopez J ^c  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^c CENTRO NACIONAL DE ACELERADORES   (Spain)

Author keywords

Optical properties; Rutherford back scattering spectroscopy; Sputtering; Thin films; Titanium oxide

Indexed keywords

BAND GAP ENERGY; BAND GAPS; DC SPUTTERING; DEPOSITION TIME; GROWTH CONDITIONS; NEAR STOICHIOMETRIC; NUCLEAR REACTION ANALYSIS; OPTICAL ABSORPTION; OXYGEN CONCENTRATIONS; OXYGEN PARTIAL PRESSURE; PARTIAL OXYGEN PRESSURES; ROOM TEMPERATURE; SI (100) SUBSTRATE; SPUTTERING POWER; TITANIUM OXIDE THIN FILMS;

BACKSCATTERING; CHEMICAL VAPOR DEPOSITION; NUCLEAR REACTORS; OPTICAL PROPERTIES; OXIDE FILMS; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; THIN FILMS; TITANIUM; TITANIUM OXIDES;

FILM PREPARATION;

EID: 65649118217     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.050     Document Type: Article

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