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Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages 613-616

ZnCdSe nanowires grown by molecular beam epitaxy

(8) Lan, B W a Hsiao, C H a Hung, S C b Chang, S J a Young, S J c Cheng, Y C d Chih, S H a Huang, B R e

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b SHIH CHIEN UNIVERSITY (Taiwan)

c NATIONAL FORMOSA UNIVERSITY (Taiwan)

d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY (Taiwan)

e NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTODETECTORS; PHOTONS; SELENIUM; SEMICONDUCTOR ALLOYS; SUBSTRATES; ZINC ALLOYS; ZINC SULFIDE;

AS-GROWN; AVERAGE DIAMETER; AVERAGE LENGTH; HEXAGONAL WURTZITE STRUCTURE; MOLECULAR-BEAM EPITAXY; TIME-CONSTANTS; TURN-OFF TIME; ZINC BLENDE;

NANOWIRES;

EID: 77952991204 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3431087 Document Type: Conference Paper

Times cited : (1)

References (18)

1
- 0037431254
- Single-crystal gallium nitride nanotubes
- DOI 10.1038/nature01551
- J. Goldberger, R. R. He, Y. F. Zhang, S. W. Lee, H. Q. Yan, H. J. Choi, and P. D. Yang, Nature (London) NATUAS 0028-0836 422, 599 (2003). 10.1038/nature01551 (Pubitemid 36460409)
- (2003) Nature , vol.422 , Issue.6932 , pp. 599-602
- Goldberger, J.¹ He, R.² Zhang, Y.³ Lee, S.⁴ Yan, H.⁵ Choi, H.-J.⁶ Yang, P.⁷

2
- 0032498174
- A laser ablation method for the synthesis of crystalline semiconductor nanowires
- DOI 10.1126/science.279.5348.208
- A. M. Morales and C. M. Lieber, Science SCIEAS 0036-8075 279, 208 (1998). 10.1126/science.279.5348.208 (Pubitemid 28103874)
- (1998) Science , vol.279 , Issue.5348 , pp. 208-211
- Morales, A.M.¹ Lieber, C.M.²

3
- 28444467471
- Vertical single-crystal ZnO nanowires grown on ZnO:Ga/Glass templates
- DOI 10.1109/TNANO.2005.851394
- C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng, and I. C. Chen, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 4, 649 (2005). 10.1109/TNANO.2005.851394 (Pubitemid 41729623)
- (2005) IEEE Transactions on Nanotechnology , vol.4 , Issue.6 , pp. 649-654
- Hsu, C.-L.¹ Chang, S.-J.² Hung, H.-C.³ Lin, Y.-R.⁴ Huang, C.-J.⁵ Tseng, Y.-K.⁶ Chen, I.-C.⁷

4
- 58149236846
- ZZZZZZ 1536-125X. 10.1109/TNANO.2008.2005917
- S. J. Chang, T. J. Hsueh, I. C. Chen, S. F. Hsieh, S. P. Chang, C. L. Hsu, Y. R. Lin, and B. R. Huang, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 7, 754 (2008). 10.1109/TNANO.2008.2005917
- (2008) IEEE Trans. Nanotechnol. , vol.7 , pp. 754
- Chang, S.J.¹ Hsueh, T.J.² Chen, I.C.³ Hsieh, S.F.⁴ Chang, S.P.⁵ Hsu, C.L.⁶ Lin, Y.R.⁷ Huang, B.R.⁸

5
- 21544475598
- JAPIAU 0021-8979. 10.1063/1.359152
- J. Tanimura, O. Wada, T. Ogama, Y. Endoh, and M. Imaizumi, J. Appl. Phys. JAPIAU 0021-8979 77, 6223 (1995). 10.1063/1.359152
- (1995) J. Appl. Phys. , vol.77 , pp. 6223
- Tanimura, J.¹ Wada, O.² Ogama, T.³ Endoh, Y.⁴ Imaizumi, M.⁵

6
- 19744383393
- Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer
- DOI 10.1063/1.1844595, 011915
- A. Balocchi, A. Curran, T. C. M. Graham, C. Bradford, K. A. Prior, and R. J. Warburton, Appl. Phys. Lett. APPLAB 0003-6951 86, 011915 (2005). 10.1063/1.1844595 (Pubitemid 40211557)
- (2005) Applied Physics Letters , vol.86 , Issue.1 , pp. 0119151-0119153
- Balocchi, A.¹ Curran, A.² Graham, T.C.M.³ Bradford, C.⁴ Prior, K.A.⁵ Warburton, R.J.⁶

7
- 1542306724
- JPCBFK 1089-5647. 10.1021/jp035595+
- Y. Jiang, X. M. Meng, W. C. Yiu, J. X. Ding, C. S. Lee, and S. T. Lee, J. Phys. Chem. B JPCBFK 1089-5647 108, 2784 (2004). 10.1021/jp035595+
- (2004) J. Phys. Chem. B , vol.108 , pp. 2784
- Jiang, Y.¹ Meng, X.M.² Yiu, W.C.³ Ding, J.X.⁴ Lee, C.S.⁵ Lee, S.T.⁶

8
- 2442509807
- IPTLEL 1041-1135. 10.1109/LPT.2004.826116
- W. R. Chen and C. J. Huang, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 16, 1259 (2004). 10.1109/LPT.2004.826116
- (2004) IEEE Photonics Technol. Lett. , vol.16 , pp. 1259
- Chen, W.R.¹ Huang, C.J.²

9
- 0030109987
- ELLEAK 0013-5194. 10.1049/el:19960415
- S. Taniguchi, T. Hino, S. Itoh, K. Nakano, N. Nakayama, A. Ishibashi, and M. Ikeda, Electron. Lett. ELLEAK 0013-5194 32, 552 (1996). 10.1049/el:19960415
- (1996) Electron. Lett. , vol.32 , pp. 552
- Taniguchi, S.¹ Hino, T.² Itoh, S.³ Nakano, K.⁴ Nakayama, N.⁵ Ishibashi, A.⁶ Ikeda, M.⁷

10
- 0033701516
- JCRGAE 0022-0248. 10.1016/S0022-0248(00)00288-8
- H. Ishikura, N. Fukuda, M. Itoi, K. Yasumoto, T. Abe, H. Kasada, and K. Ando, J. Cryst. Growth JCRGAE 0022-0248 214-215, 1130 (2000). 10.1016/S0022-0248(00)00288-8
- (2000) J. Cryst. Growth , vol.214-215 , pp. 1130
- Ishikura, H.¹ Fukuda, N.² Itoi, M.³ Yasumoto, K.⁴ Abe, T.⁵ Kasada, H.⁶ Ando, K.⁷

11
- 26844458997
- Growth and luminescence of ternary semiconductor ZnCdSe nanowires by metalorganic chemical vapor deposition
- DOI 10.1021/jp0527406
- X. T. Zhang, Z. Liu, Q. Li, and S. K. Hark, J. Phys. Chem. B JPCBFK 1089-5647 109, 17913 (2005). 10.1021/jp0527406 (Pubitemid 41445328)
- (2005) Journal of Physical Chemistry B , vol.109 , Issue.38 , pp. 17913-17916
- Zhang, X.T.¹ Liu, Z.² Li, Q.³ Hark, S.K.⁴

12
- 33745714180
- 1-xSe alloy nanowires
- DOI 10.1021/jp056892c
- R. Venugopal, P. I. Lin, and Y. T. Chen, J. Phys. Chem. B JPCBFK 1089-5647 110, 11691 (2006). 10.1021/jp056892c (Pubitemid 44024780)
- (2006) Journal of Physical Chemistry B , vol.110 , Issue.24 , pp. 11691-11696
- Venugopal, R.¹ Lin, P.-I.² Chen, Y.-T.³

13
- 24144436137
- Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy
- DOI 10.1088/0957-4484/16/5/001
- A. Colli, S. Hofmann, A. C. Ferrari, F. Martelli, S. Rubini, C. Ducati, A. Franciosi, and J. Robertson, Nanotechnology NNOTER 0957-4484 16, S139 (2005). 10.1088/0957-4484/16/5/001 (Pubitemid 41237389)
- (2005) Nanotechnology , vol.16 , Issue.5
- Colli, A.¹ Hofmann, S.² Ferrari, A.C.³ Martelli, F.⁴ Rubini, S.⁵ Ducati, C.⁶ Franciosi, A.⁷ Robertson, J.⁸

14
- 61349087984
- JESOAN 0013-4651. 10.1149/1.3077580
- C. H. Hsiao, J. Electrochem. Soc. JESOAN 0013-4651 156, J73 (2009). 10.1149/1.3077580
- (2009) J. Electrochem. Soc. , vol.156 , pp. 73
- Hsiao, C.H.¹

15
- 0242552044
- JAPIAU 0021-8979. 10.1063/1.1614432
- S. Hofmann, C. Ducati, R. J. Neill, S. Piscanec, A. C. Ferrari, J. Geng, R. E. Dunin-Borkowski, and J. Robertson, J. Appl. Phys. JAPIAU 0021-8979 94, 6005 (2003). 10.1063/1.1614432
- (2003) J. Appl. Phys. , vol.94 , pp. 6005
- Hofmann, S.¹ Ducati, C.² Neill, R.J.³ Piscanec, S.⁴ Ferrari, A.C.⁵ Geng, J.⁶ Dunin-Borkowski, R.E.⁷ Robertson, J.⁸

16
- 61649121144
- NALEFD 1530-6984. 10.1021/nl802636b
- B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, and T. Fukui, Nano Lett. NALEFD 1530-6984 9, 112 (2009). 10.1021/nl802636b
- (2009) Nano Lett. , vol.9 , pp. 112
- Hua, B.¹ Motohisa, J.² Kobayashi, Y.³ Hara, S.⁴ Fukui, T.⁵

17
- 33747115383
- Catalyst-free growth of In(As)P nanowires on silicon
- DOI 10.1063/1.2336599
- M. Mattila, T. Hakkarainen, H. Lipsanen, H. Jiang, and E. I. Kauppinen, Appl. Phys. Lett. APPLAB 0003-6951 89, 063119 (2006). 10.1063/1.2336599 (Pubitemid 44222973)
- (2006) Applied Physics Letters , vol.89 , Issue.6 , pp. 063119
- Mattila, M.¹ Hakkarainen, T.² Lipsanen, H.³ Jiang, H.⁴ Kauppinen, E.I.⁵

18
- 34547252423
- Growth and characterization of InP nanowires with InAsP insertions
- DOI 10.1021/nl070228l
- M. Tchernycheva, G. E. Cirlin, G. Patriarche, L. Travers, V. Zwiller, U. Perinetti, and J. C. Harmand, Nano Lett. NALEFD 1530-6984 7, 1500 (2007). 10.1021/nl070228l (Pubitemid 47140414)
- (2007) Nano Letters , vol.7 , Issue.6 , pp. 1500-1504
- Tchernycheva, M.¹ Cirlin, G.E.² Patriarche, G.³ Travers, L.⁴ Zwiller, V.⁵ Perinetti, U.⁶ Harmand, J.-C.⁷

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