Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

Journal of Vacuum Science and Technology B

Volumn 28, Issue 3, 2010, Pages

  Cywinski G ^a   Gadysiewicz, M ^b   Kudrawiec, R ^b   Krysko M ^a   Feduniewicz Muda, A ^a   Siekacz, M ^a   Sawicka, M ^a   Wolny, P ^a   Smalc Koziorowska, J ^a   Nevou, L ^c   Tchernycheva, M ^c   Julien, F H ^c   Misiewicz, J ^b   Skierbiszewski, C ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM; MOLECULAR BEAM EPITAXY;

EFFECTIVE MASS APPROXIMATION; ELECTRON EFFECTIVE MASS; GAN SUBSTRATE; INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITIONS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM-WELLS; RF PLASMA; SECOND ELECTRONS; WELL WIDTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77952960314     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3319325     Document Type: Conference Paper

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