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Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

Fabrication of back-side illuminated complementary metal oxide semiconductor image sensor using compliant bump

(5) Watanabe, Naoya a Tsunoda, Isao b Takao, Takayuki a Tanaka, Koichiro c Asano, Tanemasa a

a KYUSHU UNIVERSITY (Japan)

b KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

c KYUSHU SANGYO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE PIXEL; AU BUMP; AU CONE; BASE DIAMETER; BUMP FORMATION; CHIP ASSEMBLY; CMOS IMAGE SENSOR; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COMPLIANT BUMP; CU ELECTROPLATING; FILL FACTOR; IMAGE FRAMES; KEY FEATURE; PHOTODIODE ARRAYS; POLYMER SUPPORTS; READ-OUT CIRCUIT; THREE-DIMENSIONAL (3D); THROUGH-SILICON-VIA;

CMOS INTEGRATED CIRCUITS; DIGITAL CAMERAS; DIGITAL IMAGE STORAGE; FABRICATION; GLASS BONDING; GOLD; IMAGE SENSORS; METALLIC COMPOUNDS; MOS DEVICES; PHOTODIODES; PIXELS; THREE DIMENSIONAL; TRANSISTORS; WAFER BONDING;

SILICON WAFERS;

EID: 77952712937 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.04DB01 Document Type: Article

Times cited : (48)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.