Influence of oxygen flow rate on the morphology and the optical properties of thin ZnO films grown by pulsed laser deposition

Faguang Xuebao/Chinese Journal of Luminescence

Volumn 31, Issue 2, 2010, Pages 239-242

  Cao, Pei Jiang ^a   Lin, Chuan Qiang ^a   Zeng, Yu Xiang ^a   Liu, Wen Jun ^a   Jia, Fang ^a   Zhu, De Liang ^a   Ma, Xiao Cui ^a   Lu, You Ming ^a  

^a SHENZHEN UNIVERSITY   (China)

Author keywords

O2 flow rate; Pulsed laser deposition; ZnO thin films

Indexed keywords

DEEP-LEVEL DEFECTS; DIRECT BAND GAP; EMISSION BANDS; HIGH QUALITY; INFLUENCE OF OXYGEN; NEAR BAND EDGE EMISSIONS; O2 FLOW RATE; OPTICAL TRANSMITTANCE; OXYGEN FLOW RATES; PREFERRED ORIENTATIONS; ROOM TEMPERATURE; SINGLE CRYSTAL SILICON; THIN FILM QUALITY; ULTRAVIOLET OPTOELECTRONIC DEVICES; UV LASERS; VACUUM CHAMBERS; WIDE-BAND-GAP SEMICONDUCTOR; ZNO; ZNO FILMS; ZNO THIN FILM; ZNO THIN FILMS;

CRYSTAL ORIENTATION; DEFECTS; DEPOSITION; LASER RADIATION; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; OXIDE MINERALS; OXYGEN SUPPLY; PULSED LASER DEPOSITION; QUARTZ; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; SINGLE CRYSTALS; THIN FILMS; ULTRAVIOLET LASERS; ZINC OXIDE;

PULSED LASERS;

EID: 77952618974     PISSN: 10007032     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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