Paramagnetic states in μc-SiC:H thin films prepared by Hot-Wire CVD at low temperatures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 778-781

  Xiao, Lihong ^a   Astakhov, Oleksandr ^a   Carius, Reinhard ^a   Chen, Tao ^a,b   Wang, Haiyan ^a,c   Stutzmann, Martin ^d   Finger, Friedhelm ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b ZHEJIANG UNIVERSITY   (China)

^c ZHENGZHOU UNIVERSITY   (China)

^d WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPING; CRYSTALLINE GROWTH; CRYSTALLINE VOLUME FRACTION; CRYSTALLINITIES; DOPING CONCENTRATION; ELECTRICAL CONDUCTIVITY; ESR SPECTRA; HIGH DENSITY; HOT WIRE CVD; HYDROGENATED SILICON CARBIDE; LOW CRYSTALLINITY; LOW TEMPERATURES; N-TYPE DOPING; ORDERS OF MAGNITUDE; P-TYPE; P-TYPE DOPING; PARAMAGNETIC STATE; PEAK LINEWIDTH; SPIN RESONANCE; UNDOPED MATERIAL;

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; FILM PREPARATION; MICROCRYSTALLINE SILICON; PARAMAGNETIC MATERIALS; RESONANCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TITRATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952580620     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982871     Document Type: Conference Paper

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