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Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 178-181

Observation of Meyer-Neldel rule in extended energy regime using novel a-Si:H TFTs

(3) Kondo, Michio a Chida, Yoshihiko a Matsuda, Akihisa a

a ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; DOPING (ADDITIVES); ELECTRODES; FERMI LEVEL; STATISTICAL METHODS;

CONTACT LAYER; FIELD EFFECTS; HYDROGENATED AMORPHOUS SILICON THIN FILM TRANSISTORS; MAGNESIUM SOURCE DRAIN ELECTRODES; MEYER-NELDEL RULE; MICROCRYSTALLINE SILICON; QUASI FERMI LEVEL; STATISTICAL FERMI LEVEL SHIFT;

THIN FILM TRANSISTORS;

EID: 17144452287 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3093(95)00676-1 Document Type: Article

Times cited : (26)

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