Amorphous to nanocrystalline transition in HWCVD Si:H films by substrate temperature variation

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 592-595

  Gogoi, Purabi ^a   Jha, Himanshu S ^a   Deva, Dinesh ^b   Agarwal, Pratima ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CRYSTALLINE FRACTIONS; DEVICE APPLICATION; HYDROGEN CONTENTS; HYDROGENATED SILICON; NANOCRYSTALLINE PHASE; NANOCRYSTALLINES; SUBSTRATE TEMPERATURE;

AMORPHOUS SILICON; DEPOSITION; DEPOSITION RATES; ENERGY GAP; SEMICONDUCTING SILICON COMPOUNDS;

AMORPHOUS FILMS;

EID: 77952570712     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982824     Document Type: Conference Paper

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