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Volumn 299-302, Issue PART 1, 2002, Pages 14-19
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Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL GROWTH;
CRYSTAL ORIENTATION;
GRAIN BOUNDARIES;
OXIDATION;
SECONDARY ION MASS SPECTROMETRY;
SILICON;
TANTALUM;
TRANSMISSION ELECTRON MICROSCOPY;
HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);
NANOCRYSTALLINE SILICON;
NANOSTRUCTURED MATERIALS;
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EID: 4243252445
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-3093(01)00943-7 Document Type: Conference Paper |
Times cited : (26)
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References (17)
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