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Volumn 47, Issue 3 PART 2, 2008, Pages 1862-1866
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Pseudo-single-nucleus lateral crystallization of Si thin films
a
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Author keywords
Depth of focus low temperature process; Excimer laser annealing; Excimer laser crystallization; Lateral growth; LCD; Phase modulator; Poly Si; Thin film transistor
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Indexed keywords
AMORPHOUS SILICON;
ANNEALING;
BACKSCATTERING;
CRYSTALLIZATION;
DIFFRACTION;
EXCIMER LASERS;
FILM GROWTH;
GAS LASERS;
GRAIN (AGRICULTURAL PRODUCT);
HOLOGRAPHIC INTERFEROMETRY;
INDUSTRIAL APPLICATIONS;
LASERS;
LIGHT;
NANOCRYSTALLINE ALLOYS;
SILICON;
THICK FILMS;
THIN FILM TRANSISTORS;
DEPTH OF FOCUS LOW-TEMPERATURE PROCESS;
EXCIMER LASER ANNEALING;
EXCIMER LASER CRYSTALLIZATION;
LATERAL GROWTH;
LCD;
PHASE MODULATOR;
POLY-SI;
THIN-FILM TRANSISTOR;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 54249126062
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.1862 Document Type: Article |
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Times cited : (11)
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References (9)
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