Low power consumption and high sensitivity carbon monoxide gas sensor using indium oxide nanowire

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 5, 2010, Pages 3189-3192

  Moon, S E ^a   Lee, H Y ^a   Park, J ^a   Lee, J W ^a   Choi, N J ^a   Park, S J ^a   Kwak, J H ^a   Park, K H ^a   Kim, J ^a   Cho, G H ^b   Lee, T H ^b   Maeng, S ^c   Udrea, F ^d   Milne, W I ^d  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Woosuk University   (South Korea)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Gas sensor; Indium oxide; Nanowire

Indexed keywords

CARBON MONOXIDE GAS SENSORS; GAS DETECTION; GAS RESPONSE CHARACTERISTICS; GAS SENSORS; HIGH SENSITIVITY; INDIUM OXIDE NANOWIRES; LOW-POWER CONSUMPTION; MICRO-GAS SENSORS; MONITORING SYSTEM; POWER CONSUMPTION; SEM; TEM; THERMAL CVD; XRD;

CARBON MONOXIDE; ELECTRIC PROPERTIES; ELECTRIC WIRE; GAS DETECTORS; INDIUM; NANOWIRES; SENSORS;

GASES;

CARBON MONOXIDE; INDIUM; INDIUM OXIDE; NANOTUBE;

ARTICLE; CHEMISTRY; CONDUCTOMETRY; ELECTROCHEMISTRY; ENERGY TRANSFER; EQUIPMENT; EQUIPMENT DESIGN; GAS; INSTRUMENTATION; SENSITIVITY AND SPECIFICITY; TRANSDUCER; ULTRASTRUCTURE;

CARBON MONOXIDE; CONDUCTOMETRY; ELECTROCHEMISTRY; ENERGY TRANSFER; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GASES; INDIUM; NANOTUBES; SENSITIVITY AND SPECIFICITY; TRANSDUCERS;

EID: 77952482980     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2262     Document Type: Conference Paper

References (17)

1. D. Zhang, Z. Liu, C. Li, T. Tang, X. Liu, S. Han, B. Lei, and C. Zhou, Nano Lett. 4, 1919 (2004).
2. J. C. Belmonte, J. Manzano, J. Arbiol, A. Cirera, J. Puigcorbe, A. Vila, N. Sabate, I. Gracia, C. Cane, and J. R. Morante, Sens. Actuators, B 114, 881 (2006).
3. M. Graf, D. Barrenttino, K.-U. Kirstein, and A. Hierlemann, Sens. Actuators, B 117, 346 (2006).
4. T. Iwaki, J. A. Covington, F. Udrea, S. Z. Ali, P. K. Guha, and J. W. Gardner, J. Phys. C 15, 27 (2005).
5. S. Maeng, P. Guha, F. Udrea, S. Z. Ali, S. Santra, J. Gardner, J. Park, S.-H. Kim, S. E. Moon, K.-H. Park, J.-D. Kim, Y. Choi, and W. I. Milne, ETRI J. 30, 516 (2008).
6. F. Udrea, J. W. Gardner, J. Park, M. S. Haque, S. Z. Ali, P. K. Guha, S. M. C. Vieira, S. H. Kim, S. Y. Lee, K. C. Kim, H. Y. Kim, Y. Choi, S. E. Moon, W. I. Milne, and S. Maeng, Proc. 2007 IEEE Int. Electron Devices Mtg Technical Digest (Washington DC) (2007), No. 332, p. 831.
7. A. Stankovic, ETRI J. 30, 627 (2008).
8. Q. Wan, Q. H. Li, Y. J. Chen, T. H. Wang, X. L. He, J. P. Li, and C. L. Lin, Appl. Phys. Lett. 84, 3654 (2004).
9. L. Zhao, M.-S. Choi, H.-S. Kim, and S.-H. Hong, Nanotechnology 18, 445501 (2007).
10. Z. A. Ansari, S. G. Ansari, T. Ko, and J.-H. Oh, Sens. Actuators, B 87, 105 (2002).
11. F. H. Ramirez, A. Tarancon, O. Casals, J. Arbiol, A. R. Rodriguez, and J. R. Morante, Sens. Actuators, B 121, 3 (2007).
12. M. C. Carotta, S. Gherardi, C. Malagu, M. Nagliati, B. Vendemiati, G. Martinelli, M. Sacerdoti, and I. G. Lesei, Thin Solid Films 515, 8339 (2007).
13. C. S. Moon, H.-R. Kim, G. Auchterlonie, J. Drennan, and J.-H. Lee, Sens. Actuators, B 131, 556 (2008).
14. V. N. Singh, B. R. Mehta, R. K. Joshi, and F. E. Kruis, J. Nanosci. Nanotechnol. 7, 1930 (2007).
15. K. Ryu, D. Zhang, and C. Zhou, Appl. Phys. Lett. 92, 093111 (2008).
16. C. Li, D. Zhang, X. Liu, S. Han, T. Tang, J. Han, and C. Zhou, Appl. Phys. Lett. 82, 1613 (2003).
17. Z. Zeng, K. Wang, Z. Zhang, J. Chen, and W. Zhou, Nanotehnology 20, 045503 (2009).