Optomechanical and crystallization phenomena visualized with 4D electron microscopy: Interfacial carbon nanotubes on silicon nitride

Nano Letters

Volumn 10, Issue 5, 2010, Pages 1892-1899

  Flannigan, David J ^a   Zewail, Ahmed H ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Carbon nanotubes; Electron microscopy; Optomechanical; Ultrafast

Indexed keywords

4D VISUALIZATION; A-TRAIN; ATOMIC SCALE; CARBON NANOTUBE NETWORK; CRYSTALLINE SILICON NITRIDE; D ELECTRONS; DIFFRACTION CONTRAST; ELECTRONIC PROCESS; IN-SITU; NANOTUBE NETWORKS; OPTOMECHANICAL; ORDERS OF MAGNITUDE; PICOSECONDS; RESPONSE TIME; STATIC CRYSTALLIZATION; THERMAL MECHANISMS; TILT ANGLE; TIME-SCALES; ULTRA-FAST; ULTRAFAST ELECTRON MICROSCOPY;

AMORPHOUS CARBON; AMORPHOUS SILICON; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELECTRONS; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; TIME AND MOTION STUDY; VISUALIZATION;

CARBON NANOTUBES;

CARBON NANOTUBE; SILICON DERIVATIVE; SILICON NITRIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRON MICROSCOPY; EQUIPMENT; EQUIPMENT DESIGN; LIGHT; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION SCATTERING; REFRACTOMETRY; THREE DIMENSIONAL IMAGING; ULTRASTRUCTURE; YOUNG MODULUS;

CRYSTALLIZATION; ELASTIC MODULUS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; IMAGING, THREE-DIMENSIONAL; LIGHT; MICROSCOPY, ELECTRON; NANOTECHNOLOGY; NANOTUBES, CARBON; PARTICLE SIZE; REFRACTOMETRY; SCATTERING, RADIATION; SILICON COMPOUNDS;

EID: 77952387689     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl100733h     Document Type: Article

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