Relationship between mobility and high-κ Interface properties in advanced Si and SiGe nanowires

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Tachi, K ^a,b,d   Casse, M ^a   Jang, D ^b   Dupre C ^a   Hubert, A ^a   Vulliet, N ^a,c   Maffini Alvaro, V ^a   Vizioz, C ^a   Carabasse, C ^a   Delaye, V ^a   Hartmann, J M ^a   Ghibaudo, G ^b   Iwai, H ^d   Cristoloveanu, S ^b   Faynot, O ^a   Ernst, T ^a  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

^c STMICROELECTRONICS   (France)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING TECHNIQUE; INTERFACE PROPERTY; INTERFACE STATE DENSITY; LOW FIELD MOBILITY; LOW-FREQUENCY NOISE MEASUREMENTS; MOBILITY ENHANCEMENT; OXIDE TRAP DENSITY; SI-GE NANOWIRES;

ELECTRON DEVICES; NANOWIRES; SILICON ALLOYS;

SILICON;

EID: 77952361740     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424360     Document Type: Conference Paper

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