메뉴 건너뛰기




Volumn , Issue , 2009, Pages

Carrier profile designing to suppress systematic Vth variation related with device layout by controlling STI-enhanced dopant diffusions correlated with point defects

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER-PROFILE; CHANNEL DIRECTIONS; DEVICE LAYOUT; DOPANT DIFFUSION; EDGE ROUGHNESS; NMOSFET; NMOSFETS; SHALLOW TRENCH ISOLATION; STI-INDUCED STRESS; STRESS SIMULATIONS; TRANSIENT ENHANCED DIFFUSION;

EID: 77952349879     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424423     Document Type: Conference Paper
Times cited : (3)

References (10)
  • 1
    • 0042912833 scopus 로고    scopus 로고
    • A. Asenov et al., TE-D 50, p.1837 (2003).
    • (2003) TE-D , vol.50 , pp. 1837
    • Asenov, A.1
  • 2
    • 33750601335 scopus 로고    scopus 로고
    • H. Fukutome et al., T-ED 53, p. 2755 (2006).
    • (2006) T-ED , vol.53 , pp. 2755
    • Fukutome, H.1
  • 7
    • 37149056900 scopus 로고    scopus 로고
    • V. Poborchii et al., APL 91, p.241902 (2007).
    • (2007) APL , vol.91 , pp. 241902
    • Poborchii, V.1
  • 8
    • 77952417816 scopus 로고    scopus 로고
    • T. Tada et al.,SSDM 2008, p.372.
    • (2008) SSDM , pp. 372
    • Tada, T.1
  • 10
    • 33745241362 scopus 로고    scopus 로고
    • M. Ferri et al., JAP 99, p.113508 (2006).
    • (2006) JAP , vol.99 , pp. 113508
    • Ferri, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.