메뉴 건너뛰기




Volumn 46, Issue 9, 2010, Pages 652-654

Phase-change memory device fabricated using solid-state alloying

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL DEVICE; FABRICATION METHOD; PHASE CHANGES; PROGRAMMING CURRENTS; SET OPERATION; THERMAL BARRIER;

EID: 77952347670     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.0039     Document Type: Article
Times cited : (5)

References (8)
  • 1
    • 42649139561 scopus 로고    scopus 로고
    • The future of phase-change semiconductor memory devices
    • 0022-3093
    • Hudgens, S.: ' The future of phase-change semiconductor memory devices ', J. Non-Cryst. Solids, 2008, 354, (19-25), p. 2748-2752 0022-3093
    • (2008) J. Non-Cryst. Solids , vol.354 , Issue.1925 , pp. 2748-2752
    • Hudgens, S.1
  • 2
    • 39749163606 scopus 로고    scopus 로고
    • Modeling of programming and read performance in phase-change memories - Part I: Cell optimization and scaling
    • DOI 10.1109/TED.2007.911630
    • Russo, U., Ielmini, D., Redaelli, A., and Lacaita, A.L.: ' Modeling of programming and read performance in phase-change memories. Part I: Cell optimization and scaling ', IEEE Trans. Electron Devices, 2008, 55, (2), p. 506-514 0018-9383 (Pubitemid 351292038)
    • (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.2 , pp. 506-514
    • Russo, U.1    Ielmini, D.2    Redaelli, A.3    Lacaita, A.L.4
  • 4
    • 0000408780 scopus 로고    scopus 로고
    • Dynamics of ultrafast reversible phase transitions in GeSb films triggered by picosecond laser pulses
    • 10.1063/1.125244 0003-6951
    • Siegel, J., Afonso, C.N., and Solis, J.: ' Dynamics of ultrafast reversible phase transitions in GeSb films triggered by picosecond laser pulses ', Appl. Phys. Lett., 1999, 75, (20), p. 3102-3104 10.1063/1.125244 0003-6951
    • (1999) Appl. Phys. Lett. , vol.75 , Issue.20 , pp. 3102-3104
    • Siegel, J.1    Afonso, C.N.2    Solis, J.3
  • 6
    • 3342915797 scopus 로고    scopus 로고
    • Analysis of phase distribution in phase-change nonvolatile memories
    • 10.1109/LED.2004.831219 0741-3106
    • Ielmini, D., Lacaita, A.L., Pirovano, A., Pellizzer, F., and Bez, R.: ' Analysis of phase distribution in phase-change nonvolatile memories ', IEEE Electron Device Lett., 2004, 25, (7), p. 507-509 10.1109/LED.2004.831219 0741-3106
    • (2004) IEEE Electron Device Lett. , vol.25 , Issue.7 , pp. 507-509
    • Ielmini, D.1    Lacaita, A.L.2    Pirovano, A.3    Pellizzer, F.4    Bez, R.5
  • 7
    • 0041025704 scopus 로고
    • Mechanism of the breakdown in films of glassy chalcogenide semiconductors
    • Kolomiets, B., Lebedev, E.A., and Taksami, I.A.: ' Mechanism of the breakdown in films of glassy chalcogenide semiconductors ', Sov. Phys. Semicond., 1969, 3, (2), p. 267-268
    • (1969) Sov. Phys. Semicond. , vol.3 , Issue.2 , pp. 267-268
    • Kolomiets, B.1    Lebedev, E.A.2    Taksami, I.A.3
  • 8
    • 0001152119 scopus 로고
    • Thermal and electrical properties of the Ge:Sb:Te system by photoacoustic and Hall measurements
    • Yáñez-Limón, J.M., González-Hernández, J., Alvarado-Gil, J.J., Delgadillo, I., and Vargas, H.: ' Thermal and electrical properties of the Ge:Sb:Te system by photoacoustic and Hall measurements ', Phys. Rev. B, 1995, 52, (23), p. 16321-16324
    • (1995) Phys. Rev. B , vol.52 , Issue.23 , pp. 16321-16324
    • Yáñez-Limón, J.M.1    González-Hernández, J.2    Alvarado-Gil, J.J.3    Delgadillo, I.4    Vargas, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.