The influences of device geometry and p-type doping on a solution-processed polymer space-charge-limited transistor

Journal of Physics D: Applied Physics

Volumn 43, Issue 20, 2010, Pages

  Chao, Yu Chiang ^a   Chen, Chun Yu ^a   Zan, Hsiao Wen ^a   Meng, Hsin Fei ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTOR LEAKAGE; DEVICE GEOMETRIES; DEVICE STRUCTURES; GEOMETRIC DESIGN; HIGH-DENSITY; INSULATING LAYERS; ON/OFF CURRENT RATIO; ON/OFF RATIO; ORDERS OF MAGNITUDE; P-TYPE DOPING; SOLUTION-PROCESSED POLYMER; SPACE-CHARGE LIMITED; TRANSISTOR CHARACTERISTICS; VERTICAL SPACE; VERTICAL TRANSISTORS;

POLYMERS;

TRANSISTORS;

EID: 77952326541     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/20/205101     Document Type: Article

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