Controllable molecular doping and charge transport in solution-processed polymer semiconducting layers

Advanced Functional Materials

Volumn 19, Issue 12, 2009, Pages 1901-1905

  Zhang, Yuan ^a   Boer, Bert De ^a   Blom, Paul W M ^b  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b HOLST CENTRE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSPORT; COSOLVENT; DENSITY DEPENDENCE; DENSITY-DEPENDENT; DOPED FILMS; F4-TCNQ; FREE CARRIER DENSITY; FREE HOLE CONCENTRATION; FREE HOLE DENSITY; HOLE-ONLY DEVICE; IMPEDANCE MEASUREMENT; LOW BIAS; MEH-PPV; METHOXY; MOLECULAR DOPING; OHMIC BEHAVIOR; ORDER OF MAGNITUDE; ORDERS OF MAGNITUDE; P-PHENYLENE VINYLENE; P-TYPE DOPING; SCHOTTKY DIODES; SEMICONDUCTING LAYER; SILVER ELECTRODE; SOLUTION-PROCESSED POLYMER; TETRAFLUORO-TETRACYANOQUINODIMETHANE;

CURRENT VOLTAGE CHARACTERISTICS; HOLE CONCENTRATION; HOLE MOBILITY; SCHOTTKY BARRIER DIODES; SILVER;

DOPING (ADDITIVES);

EID: 67649227667     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200801761     Document Type: Article

References (30)

1. C. K. Chiang, C. R. Fincher, Jr., Y. W. Park, A. J. Heeger, H. Shirakawa, E. J. Louis, S. C. Gau, A. G. MacDiarmid, Phys. Rev. Lett. 1977, 39, 1098.
2. M. Pfeiffer, A. Beyer, T. Fritz, K. Leo, Appl. Phys. Lett. 1998, 73, 3202.
3. W. Gao, A. Kahn, Appl. Phys. Lett. 2001, 79, 4040.
4. W. Gao, A. Kahn,J.Appl. Phys. 2003, 94, 359.
5. J. Blochwitz, T. Fritz, M. Pfeiffer, K. Leo, D. M. Alloway, P. A. Lee, N. R. Armstrong, Org. Electron. 2001, 2, 97.
6. W. Gao, A. Kahn,J.Phys.: Condens. Matter 2003, 15, S2757.
7. X. Zhou, J. Blochwitz, M. Pfeiffer, A. Nollau, T. Fritz, K. Leo, Adv. Funct. Mater. 2001, 11, 310.
8. J. Kido, K. Nagai, Y. Okamoto, IEEE Trans. Electron. Devices 1993, 40, 1342.
9. J. Kido, T. Matsumoto, Appl. Phys. Lett. 1998, 73, 2866.
10. A. G. Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, Appl. Phys. Lett. 2003, 82, 4495.
11. A. Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, S. Machill, Adv. Funct. Mater. 2004, 14, 255.
12. F. Li, A. Werner, M. Pfeiffer, K. Leo,X. Liu,J.Phys. Chem. B2004, 108, 17076.
13. A. Nollau, M. Pfeiffer, T. Fritz, K. Leo,J.Appl. Phys. 2000, 87, 4340.
14. C. K. Chan, F. Amy, Q. Zhang, S. Barlow, S. Marder, A. Kahn, Chem. Phys. Lett. 2006, 431, 67.
15. M. Pfeiffer, K. Leo, X. Zhou, J. S. Huang, M. Hofmann, A. Werner, J. Blochwitz-Nimoth, Org. Electron. 2003, 4, 89.
16. K. Walzer, B. Maennig, M. Pfeiffer, K. Leo, Chem. Rev. 2007, 107, 1233.
17. J. M. Leger, D. B. Rodovsky, G. P. Bartholomew, Adv. Mater. 2006, 18, 3130.
18. J.-H. Shin, S. Xiao, A. Fransson, Appl. Phys. Lett. 2005, 87, 043506.
19. J. Gao, G. Yu, A. J. Heeger, Appl. Phys. Lett. 1997, 71, 1293.
20. J. H. Burroughes, D. D. C Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burns, A. B. Holmes, Nature 1990, 347, 539.
21. J. S. Kim, R. H. Friend, I. Grizzi,J. H. Burroughes, Appl. Phys. Lett. 2005, 87, 023506.
22. K.-H. Yim, G. L. Whiting, C. E. Murphy, J. J. M. Halls, J. H. Burroughes, R. H. Friend, J.-S. Kim, Adv. Mater. 2008, 20, 3319.
23. C. Tanase, E. J. Meijer, P. W. M. Blom, D. M. de Leeuw, Phys. Rev. Lett. 2003, 91, 216601.
24. C. Tanase, P. W. M. Blom, D. M. de Leeuw, Phys. Rev. B 2004, 70, 193202.
25. W. F. Pasveer, J. Cottaar, C. Tanase, R. Coehoorn, P. A. Bobbert, P. W. M. Blom, D. M. de Leeuw, M. A. J. Michels, Phys. Rev. Lett. 2005, 94, 206601.
26. P.W. M. Blom, M.J. M.deJong,J. J. M. Vleggaar, Appl. Phys. Lett. 1996, 68, 3308.
27. M. A. Lampert, P. Mark, Current Injection in Solids, Academic, New York 1970.
28. H. Shimotani, G. Diguet, Y. Iwasa, Appl. Phys. Lett. 2005, 86, 022104.
29. V. I.Arkhipov, P. Heremans, E. V. Emelianova, H. Bässler, Phys. Rev. B2005, 71, 045214.
30. K. Asadi, F. Gholamrezaie, E. C. P. Smits, P. W. M. Blom, B. de Boer,J.Mater. Chem. 2007, 17, 1949.