Design consideration of high power density inverter with low-on-voltage SiC-JBS and high-speed gate driving of Si-IGBT

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2009, Pages 397-400

  Takao, K ^a   Ota, C ^a   Nishio, J ^a   Shinohe, T ^a   Ohashi, H ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION LOSS; DESIGN CONSIDERATIONS; HIGH POWER DENSITY; HIGH-SPEED GATE; POWER DENSITIES; POWER-LOSSES; SWITCHING LOSS; THREE-PHASE INVERTER;

ACTIVE FILTERS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; SILICON CARBIDE;

SILICON;

EID: 65949088116     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2009.4802688     Document Type: Conference Paper

References (5)

1. H. Ohashi, "Recent Power Devices Trend," IEEJ, vol.12, No.3, pp. 168-171, 2002 (in Japanese).
2. M. O'Neil, "The Benefits of Using a Cree Inc. IGBT/SiC Schottky CoPack in AC Inverter Applications," Cree Inc., Power Components Application Notes, CPWR-AN06
3. B. Weis, D. Peters and M. Wölz, "A new 690 VAC Drive with SiC Schottky Freewheeling Diodes," Power Electronics Europe, issue 8, pp.33-35, Dec. 2006
4. 3 by using SiC Diodes," in Proc. CDROM, 4th International Conference on Integrated Power Systems (CIPS 2006), 2006.
5. M. Tsukuda, I. Omura, T. Domon, W. Saito and T. Ogura, "Demonstration of High Output Power Density (30 W/cc) Converter using 600 V SiC-SBD and Low Impedance Gate Driver," Proc. of IPEC-Niigata 2005, pp.1184-1189, 2005