Analysis of the dynamic characteristics of a power semiconductor module, considering the influence of electromagnetic coupling between wiring

2005 European Conference on Power Electronics and Applications

Volumn 2005, Issue , 2005, Pages

  Usui, Osamu ^a   Nakatake, Hiroshi ^a   Ohi, Takeshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Electromagnetic field analysis; Power semiconductor module; Electromagnetic coupling; Parasitic parameter

Indexed keywords

ELECTROMAGNETIC COUPLING; ELECTROMAGNETIC FIELD EFFECTS; ELECTROMAGNETISM; PARAMETER ESTIMATION; SEMICONDUCTOR MATERIALS; SWITCHING;

ELECTROMAGNETIC FIELD ANALYSIS; PARASITIC PARAMETER; POWER SEMICONDUCTORS;

POWER ELECTRONICS;

EID: 33947675714     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/epe.2005.219404     Document Type: Conference Paper

References (3)

1. T. Ohi, T. Horiguchi, T. Okuda, T. Kikunaga, and H. Matsumoto: "Analysis and Measurement of Chip Current Imbalances Caused by the Structure of Bus Bars in an IGBT Module", IEEE Industrial Applications Conference, 1999, pp. 1775-1779
2. T. Ohi, A. Iwata, K. Arai: "Investigation of Gate Voltage Oscillations in an IGBT Module under Short Circuit Conditions", IEEE Power Electronics Specialists Conference, 2002
3. P.R. Palmer, B.H. Stark, and J.C. Joyce,: "Non-Invasive Measurement of Chip Currents in IGBT Modules", IEEE Power Electronics Specialists Coference, 1997, pp 166-171