Analysis and measurement of chip current imbalances caused by the structure of bus bars in an IGBT module

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 1999, Pages 1775-1779

  Ohi, Takeshi ^a   Horiguchi, Takeshi ^a   Okuda, Tatsuya ^a   Kikunaga, Toshiyuki ^a   Matsumoto, Hideo ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP CURRENT IMBALANCES; INSULATED GATE BIPOLAR TRANSISTORS MODULE; PARALLEL CIRCUITS; TEST MODULE;

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC NETWORK TOPOLOGY; FINITE ELEMENT METHOD; MAXWELL EQUATIONS; MULTICHIP MODULES; SEMICONDUCTOR DEVICE MODELS; THREE DIMENSIONAL;

BUSBARS;

EID: 0033351924     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. T. Stockmeier, R. Bayerer, E. Herr, D. Sinerius, U. Thiemann, "Reliable 1200 Amp 2500 V IGBT Modules for Traction Applications", IEE colloquium, London, 1995, Proc. pp.3/1-3/13.
2. L. Schnur, G. Debeled, S. Dewar, J.Marous, "Low Inductance, Explosion Robust IGBT Modules in High Power Inverter Applications", IEEE Industry Applications Conference, 1998, pp.1056-1060.
3. Ron K. Poon, "Computer Circuits Electrical Design", Prentice Hall 1995