100 amp, 1000 volt class 4H-silicon carbide MOSFET modules

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 899-902

  Losee, P ^a   Matocha, K ^a   Arthur, S ^a   Delgado, E ^a   Beaupre, R ^a   Pautsch, A ^a   Rao, R ^a   Nasadoski, J ^a   Garrett, J ^a   Stum, Z ^a   Stevanovic, L ^a   Conte, R ^b   Monaghan, K ^b  

^a GE GLOBAL RESEARCH   (United States)

^b Sensitron Semiconductor   (United States)

Author keywords

4H SiC DMOSFET; Power module; Power switching

Indexed keywords

MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SWITCHING;

4H SILICON CARBIDE; DMOSFET; POWER MODULE; POWER SWITCHING; POWER SWITCHING MODULES; SCHOTTKY DIODES; SWITCHING CHARACTERISTICS; SWITCHING PERFORMANCE;

SILICON CARBIDE;

EID: 77955449905     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.899     Document Type: Conference Paper

References (8)

1. M. Kitabatake, M. Tagome et al.: ICSCRM 2007, Mater. Sci. Forum, in press.
2. S. Kinouchi, H. Nakatake, T. Kitamura et al.: ICSCRM 2007, Mater. Sci. Forum, in press.
3. R. Green, A. Ogunniyi, D. Ibatayo et al.: ICSCRM 2007, Mater. Sci. Forum, in press.
4. S. Harada, Y. Hayashi, K. Takao et al.: Proceedings of ISPSD 2007, p. 289.
5. M. Imaizumi, Y. Tarui, S. Kinouchi et al.: Mater. Sci. Forum Vol. 527-529 (2006), p. 1289 doi:10.4028/www.scientific.net/MSF.527-529.1289.
6. N. Miura, K. Fujihira, Y. Nakao, T. Watanabe, Y. Tarui et al.: Proceedings of ISPSD 2006.
7. P. Losee, K. Matocha, S. Arthur, J. Nasadoski, Z. Stum, J. Garrett, M. Schutten, G. Dunne, L. Stevanovic: IEEE Trans. Elec. Dev. Vol. 55 (2008), p. 1824 doi:10.1109/TED.2008.926592.
8. J. Richmond, B. Hull, S-H Ryu, A. Agarwal, J. Palmour, J. Scofield: Proceedings of HiTECH Electronics Conference (2008).