Characterization and physics of top-down silicon nanowire phototransistors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7608, Issue , 2010, Pages

  Zhang, Arthur ^a   Cheng, James ^a   Kim, Hongkwon ^a   Liu, Yisi ^b   Lo, Yu Hwa ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Agiltron   (United States)

Author keywords

Nanowire; Photodetector; Phototransistor; Silicon

Indexed keywords

3-D NUMERICAL SIMULATION; E-BEAM LITHOGRAPHY; FABRICATION TECHNIQUE; HIGH-SENSITIVITY DETECTION; LIGHT INTENSITY; LOW-TEMPERATURE MEASUREMENTS; MAXIMUM SENSITIVITY; PRECISE CONTROL; RADIAL GATES; REACTIVE ION; SILICON NANOWIRES; SILICON PHOTO-DETECTOR; SINGLE PHOTONS; SURFACE STATE DENSITY; SURFACE-TO-VOLUME RATIO; TOP-DOWN FABRICATION; TOPDOWN; VISIBLE SPECTRA;

COMPUTATIONAL GEOMETRY; COMPUTER SIMULATION; ELECTROMAGNETIC INDUCTION; FABRICATION; INDUCTIVELY COUPLED PLASMA; NANOPHOTONICS; NANOWIRES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PLASMA ETCHING; REACTIVE ION ETCHING; SURFACES; TEMPERATURE MEASUREMENT;

PHOTOTRANSISTORS;

EID: 77951998145     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.841201     Document Type: Conference Paper

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