Cost-effective laser interference lithography using a 405 nm AlInGaN semiconductor laser

Journal of Micromechanics and Microengineering

Volumn 20, Issue 5, 2010, Pages

  Byun, Ikjoo ^a   Kim, Joonwon ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALINGAN; DEEP REACTIVE ION ETCHING; ETCH MASK; HE-CD LASERS; INTERFERENCE LITHOGRAPHY; IS COSTS; LASER INTERFERENCE LITHOGRAPHY; LONG COHERENCE LENGTH; PERIODIC PATTERN;

ASPECT RATIO; COST EFFECTIVENESS; COSTS; LASERS; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING;

SEMICONDUCTOR LASERS;

EID: 77951992657     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/5/055024     Document Type: Article

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