Finite-size effects on thermionic emission in metalgraphene-nanoribbon contacts

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 491-493

  Mao, Ling Feng ^a   Li, X J ^b   Zhu, C Y ^a   Wang, Z O ^a   Lu, Z H ^a   Yang, J F ^a   Zhu, H W ^c   Liu, Y S ^c   Wang, J Y ^d  

^a SOOCHOW UNIVERSITY   (China)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c ZHEJIANG SCI TECH UNIVERSITY   (China)

^d PEKING UNIVERSITY   (China)

Author keywords

Finite size effect; Graphene nanoribbon; Metal semiconductor contact; Thermionic emission (TE)

Indexed keywords

FINITE SIZE EFFECT; GRAPHENE NANO-RIBBON; HIGH ENERGY; LOW TEMPERATURES; NANORIBBONS;

GRAPHENE; SIZE DETERMINATION; THERMIONIC EMISSION;

GRAPHITE;

EID: 77951879721     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2043639     Document Type: Article

References (12)

1. R. H. Baughman, A. A. Zakhidov, and W. A. de Heer, "Carbon nanotubes: The route toward applications," Science, vol.297, no.5582, pp. 787-792, Aug. 2002. (Pubitemid 34845917)
2. A. K. Geim and K. S. Novoselov, "The rise of graphene," Nat. Mater., vol.6, no.3, pp. 183-191, Mar. 2007.
3. M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, "A graphene field effect device," IEEE Electron Device Lett., vol.28, no.4, pp. 282-284, Apr. 2007.
4. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Crigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films," Science, vol.306, no.5696, pp. 666-669, Oct. 2004. (Pubitemid 39440910)
5. V. M. Pereira and A. H. Castro Neto, "Strain engineering of graphene's electronic structure," Phys. Rev. Lett., vol.103, no.4, pp. 046 801-1-046 801-4, May 2009.
6. L. Jiao, L. Zhang, X. Wang, G. Diankov, and H. Dai, "Narrow graphene nanoribbons from carbon nanotubes," Nature, vol.458, no.7240, pp. 877-880, Apr. 2009.
7. X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, and H. Dai, "Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors," Phys. Rev. Lett., vol.100, no.2, pp. 206 803-1-206 803-4, May 2008. (Pubitemid 351718006)
8. S. M. Sze, Physics of Semiconductor Devices. Hoboken, NJ: Wiley, 1981.
9. L. F. Mao, X. J. Li, Z. O. Wang, and J. Y. Wang, "Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors," Nanotechnology, vol.20, no.27, pp. 275 203-1-275 203-4, Jul. 2009.
10. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Gregorieva, and A. A. Firsov, "Two-dimensional gas of massless Dirac fermions in graphene," Nature, vol.438, no.7065, pp. 197-200, Nov. 2005. (Pubitemid 41599867)
11. T. Fang, A. Konar, H. Xing, and D. Jena, "Carrier statistics and quantum capacitance of graphene sheets and ribbons," Appl. Phys. Lett., vol.91, no.9, pp. 092 109-1-092 109-3, Aug. 2007. (Pubitemid 47352294)
12. G. Giovannetti, P. A. Khomyako, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, "Doping graphene with metal contacts," Phys. Rev. Lett., vol.101, no.2, pp. 026 803-1-026 803-4, Jul. 2008.