Structural properties of ultra-thin Y2O3 gate dielectrics studied by X-Ray Diffraction (XRD) and X-Ray Photoelectron Spectroscopy (XPS)

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Volumn , Issue , 2010, Pages 1256-1257

  Liu, Chuan Hsi ^a   Juan, Pi Chun ^b   Cheng, Chin Pao ^a   Lai, Guan Ting ^a   Lee, Huan ^a   Chen, Yi Kuan ^b   Liu, Yu Wei ^b   Hsu, Chih Wei ^b  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^b MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL BONDING STATE; CRYSTALLINE PHASE; GATE-LEAKAGE CURRENT; PHYSICAL THICKNESS; RF-SPUTTERING; SI SUBSTRATES; SILICATE LAYERS; ULTRA-THIN; XPS; XRD PATTERNS; YTTRIUM SILICATES;

AMORPHOUS FILMS; ANNEALING; CHEMICAL BONDS; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS CAPACITORS; NANOELECTRONICS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SEMICONDUCTING SILICON; SILICATES; X RAY DIFFRACTION; YTTRIUM; YTTRIUM ALLOYS; YTTRIUM OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77951663005     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2010.5424914     Document Type: Conference Paper

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