Quantitative analysis for hillocks grown from electroplated Sn film

Journal of Applied Physics

Volumn 107, Issue 7, 2010, Pages

  Cheng, Jing ^a   Chen, Samuel ^b   Vianco, Paul T ^c   Li, James C M ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

^b EASTMAN KODAK COMPANY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION LAYER; APPLIED PRESSURE; GRAIN SIZE; HILLOCK GROWTH; INTERFACE DIFFUSION; PER UNIT; QUANTITATIVE ANALYSIS; QUANTITATIVE METHOD; SELF-DIFFUSIVITY; SPECIAL FIXTURES; SURFACE MAPPING;

CHROMIUM; COMPRESSIVE STRESS; MATLAB; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TENSILE STRESS; TITANIUM COMPOUNDS;

TIN;

EID: 77951611429     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3359658     Document Type: Article

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