Post-annealing of solution-based metal-induced laterally crystallized poly-Si with triple-frequency YAG laser

Journal of Materials Science: Materials in Electronics

Volumn 18, Issue SUPPL. 1, 2007, Pages 351-354

  li, Juan ^a   Meng, Zhiguo ^a   Wong, Man ^b   Wu, Chunya ^a   Kwok, Hoi Sing ^b   Xiong, Shaozhen ^a  

^a NANKAI UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT MOBILITY; SOLUTION-BASED METAL-INDUCED LATERAL CRYSTALLIZED POLY-SI;

ANNEALING; SOLID STATE LASERS; THRESHOLD VOLTAGE; YTTRIUM COMPOUNDS;

POLYSILICON;

EID: 34547579308     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9242-4     Document Type: Conference Paper

References (4)

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2. Z. Meng, M. Wang, M. Wong, IEEE Trans. Electron Devices 47(2), 404 (2000)
3. Z.G. Meng, M. Wong, IEEE Trans. Electron Devices 49 (6), 991 (2002)
4. Z.-G. Meng, C.-Y. Wu, J. Li, S.-Z. Xiong, S.K. Hoi, W. Man, Acta. Physica. Sin. 54(7), 3364 (2005)