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Volumn , Issue , 2009, Pages 000175-000180

In-situ CVD processes for crystalline silicon thin-film solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CELL STRUCTURE; CHEMICAL VAPOUR DEPOSITION; CHEMICAL VAPOURS; CONTAMINATED SUBSTRATES; CRYSTALLINE SILICONS; CVD PROCESS; CZ SUBSTRATES; DEPOSITED LAYER; DIFFUSE FRACTION; EPITAXIAL WAFERS; GETTERING; GETTERING EFFECT; HIGH EFFICIENCY; HIGH TEMPERATURE; HIGH-THROUGHPUT; IN-LINE; IN-SITU; INCIDENT LIGHT; MULTICRYSTALLINE; POROSIFICATION; SAW DAMAGES; SILICON SUBSTRATES; SOLAR CELL EFFICIENCIES; SPECTRAL REFLECTANCES; THIN-FILM SOLAR CELLS;

EID: 77951609725     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411703     Document Type: Conference Paper
Times cited : (4)

References (16)
  • 9
    • 0033312603 scopus 로고    scopus 로고
    • High-Temperature CVD for Crystalline-Silicon Thin-Film Solar Cells
    • F. R. Faller and A. Hurrle, High-Temperature CVD for Crystalline-Silicon Thin-Film Solar Cells, IEEE Transactions on Electron Devices 46 (1999) pp.2048-2054.
    • (1999) IEEE Transactions on Electron Devices , vol.46 , pp. 2048-2054
    • Faller, F.R.1    Hurrle, A.2
  • 11
    • 77951524154 scopus 로고
    • Chemical Vapor Deposition of Silicon and Its Compounds
    • ed. G. McGuire, New Jersey, Noyes Publications
    • K. E. Bean, Chemical Vapor Deposition of Silicon and Its Compounds, Semiconductor Materials and Process Technology Handbook, ed. G. McGuire, New Jersey, Noyes Publications (1988).
    • (1988) Semiconductor Materials and Process Technology Handbook
    • Bean, K.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.