Porous silicon as an internal reflector in thin epitaxial solar cells

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 5, 2007, Pages 1340-1345

  Kuzma Filipek, I ^a   Duerinckx, F ^a   Van Nieuwenhuysen, K ^a   Beaucarne, G ^a   Poortmans, J ^a   Mertens, R ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CONDUCTIVE PROPERTIES; INTERMEDIATE REFLECTOR; LIGHT TRAPPING;

BRAGG REFLECTORS; ELECTROCHEMICAL ETCHING; EPITAXIAL FILMS; MULTILAYERS; POROUS SILICON; SUBSTRATES;

SOLAR CELLS;

EID: 34547227827     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200674332     Document Type: Article

References (6)

1. G. Beaucarne, F. Duerinckx, I. Kuzma, K. Van Nieuwenhuysen, H. J. Kim, and J. Poortmans, Thin Solid Films 511/512, 533 (2006).
2. F. Duerinckx, K. Van Nieuwenhuysen, H. Kim, I. Kuzma, H. Dekkers, G. Beaucarne, and J. Poortmans, Prog. Photovolt. 13(8), 673 (2005).
3. M. Y. Ghannam, N. Rafat, and A. A. Abouelsaood, IEEE Trans. Electron Devices 46(10), 2072 (1999).
4. K. Van Nieuwenhuysen, F. Duerinckx, I. Kuzma, D. Van Gestel, G. Beaucarne, and J. Poortmans, J. Cryst. Growth 287, 438 (2006).
5. F. Secco d'Aragona, J. Electrochem. Soc. 119, 948 (1972).
6. G. Muller and R. Brendel, phys. stat. sol. (a) 182, 313 (2000).