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Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001988-001991

Substrate dependence of surface passivation using atomic layer deposited dielectrics

(6) Wang, Jun a Baroughi, Mahdi Farrokh a Bills, Braden a Galipeau, David a Samadzadeh, R b Sivoththaman, S b

a South Dakota State University (United States)

b UNIVERSITY OF WATERLOO (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINIUM OXIDE; ATOMIC LAYER DEPOSITED; C-V MEASUREMENT; CAPACITANCE VOLTAGE; DIELECTRIC LAYER; FIXED CHARGE DENSITY; LOW TEMPERATURES; SI SUBSTRATES; SI SURFACES; SILICON SUBSTRATES; SURFACE PASSIVATION;

ALUMINUM; DIELECTRIC MATERIALS; HAFNIUM; HAFNIUM OXIDES; OXIDES; PASSIVATION; SILICON; SUBSTRATES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77951594658 PISSN: 01608371 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/PVSC.2009.5411511 Document Type: Conference Paper

Times cited : (9)

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