MBE-VLS growth of GaAs nanowires on (111)si substrate

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 2740-2742

  Paek, J H ^a   Nishiwaki, T ^a   Yamaguchi, M ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; GROWTH CONDITIONS; HEXAGONAL COLUMNS; SI SUBSTRATES; V/III RATIO; VLS GROWTH;

CRYSTAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; WIRE;

GALLIUM ALLOYS;

EID: 77951268508     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779248     Document Type: Conference Paper

References (7)

1. M. T. Björk, C. Thelander, A. E. Hansen, L. E. Jensen, M. W. Larsson, L. R. Wallenberg, and L. Samuelson, Nano. Lett. 4, 1621 (2004).
2. K. Hiruma, K. Haraguchi, M. Yazawa, Y. Madokoro, and T. Katsuyama, Nanotechnology 17, 369 (2006).
3. A. L. Roest, M. A. Verheijen, O. Wunnicke, S. Serafin, H. Wondergem, and E. P. A. M. Bakkers, Nanotechnology 17, 271 (2006).
4. J. C. Harmand, M. Tchernycheva, G. Patriarche, L. Travers, F. Gkas, and G. Cirlin; J. Cryst. Growth 301/302, 853 (2007).
5. V. G. Dubrovskii, N. V. Sibirev, G. V. Cirlin, J. C. Harmond, and V. M. Ustinov, Phys. Rev. E 73, 021603 (2006).
6. T. Nishinaga, X. Q. Shen, and D. Kishimoto, J. Cryst. Growth 163, 60 (1996).
7. J. C. Harmond, G. Patriarche, N. Péré-Larperne, M.-N. MératCombes, L. Travers, and F. Glas, Appl. Phys. Lett. 87, 203101 (2005).