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Volumn 168, Issue 1, 2010, Pages 36-39
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Field electron emission from GaN/W tips
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Author keywords
Field emission current fluctuations; Field emission microscopy; GaN; Plasma assisted reactive evaporation
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Indexed keywords
ANNEALING;
EVAPORATION;
FIELD EMISSION;
III-V SEMICONDUCTORS;
NITROGEN PLASMA;
SCANNING ELECTRON MICROSCOPY;
EMISSION CURRENT FLUCTUATION;
FIELD ELECTRON EMISSIONS;
FIELD EMISSION CURRENT FLUCTUATION;
FIELD EMISSION CURRENTS;
FIELD EMISSION MICROSCOPY;
GALLIUM NITRIDE FILMS;
NITROGEN ENVIRONMENT;
PLASMA ASSISTED REACTIVE EVAPORATION;
REACTIVE EVAPORATION;
STRUCTURAL FEATURE;
GALLIUM NITRIDE;
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EID: 77951254636
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2009.12.037 Document Type: Article |
Times cited : (2)
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References (20)
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