Characterization of Mg-doped AlInN grown by metalorganic vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1685-1687

  Cheng, A T ^a   Su, Y K ^a   Lai, W C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); HOLE CONCENTRATION; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL LATTICES; SURFACE ROUGHNESS; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION ANALYSIS;

AL CONTENT; CLADDING LAYER; DEVICE APPLICATION; INDIUM CONTENT; LATTICE-MATCHED; METAL-ORGANIC VAPOR PHASE EPITAXY; SATELLITE PEAKS; THERMAL-ANNEALING;

SEMICONDUCTOR ALLOYS;

EID: 77951242401     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778587     Document Type: Conference Paper

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