Monitoring of plasma processing chamber using ion energy analyser and time series neural network

Surface Engineering

Volumn 26, Issue 3, 2010, Pages 224-228

  Kim, B ^a   Kim, S ^a  

^a Sejong University   (South Korea)

Author keywords

In situ sensor; Ion energy analysis; Model; Monitoring; Neural network; Plasma chamber

Indexed keywords

AUTOCORRELATED; BACK PROPAGATION NEURAL NETWORKS; DETECTION SENSITIVITY; IN-SITU; ION ENERGIES; ION ENERGY ANALYSIS; ION ENERGY DISTRIBUTIONS; MAXIMUM SENSITIVITY; PLASMA CHAMBERS; PLASMA PROCESS; PLASMA PROCESSING; PREDICTION ERRORS; PREDICTION PERFORMANCE; SILICON NITRIDE FILM;

ELECTROMAGNETIC INDUCTION; ENERGY MANAGEMENT; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; IONS; SENSORS; SILICON NITRIDE; TIME SERIES;

NEURAL NETWORKS;

EID: 77951238549     PISSN: 02670844     EISSN: 17432944     Source Type: Journal    
DOI: 10.1179/174329409X455449     Document Type: Article

References (15)

1. B. Kim: 'Challenges in controlling plasma processes using artificial neural network', Surf. Eng., 2006, 22, 225-226. (Pubitemid 44449862)
2. H. H. Yue, S. J. Qin, R. J. Markle, C. Nauert and M. Gatto: 'Fault detection of plasma etcher using optical emission spectra', IEEE Trans. Semicond. Manuf., 2000, 13, 374-384
3. J. O. Stevenson, P. P. Ward, M. L. Smith and R. J. Markle: 'A plasma process monitor/control system', Surf. Interface Anal., 1998, 26, 124-133.
4. D. White, B. Goodlin, A. Gower, D. Boning, H. Chen, H. Sawin and T. Dalton: 'Low open-are endpoint detection using a PCAbased T2 statistics and Q statistic on optical emission spectroscopy measurements', IEEE Trans. Semicond. Manuf., 2000, 13, 193-207.
5. S. J. Hong and G. S. May: 'Neural network-based real-time malfunction diagnosis of reactive ion etching using in situ metrology data', IEEE Trans. Semicond. Manuf., 2004, 17, 408-421.
6. B. Kim, J. Bae and W. S. Hong: 'Plasma control using neural network and optical emission spectroscopy', J. Vac. Sci. Technol. A, 2005, 23A, 355-358. (Pubitemid 43126398)
7. M. R. Dashtbayazi: 'Characterization of Al/SiC nanocomposite prepared by mechanical alloying process using artificial neural network model', Mater. Manuf. Proc., 2008, 23, 37-45.
8. B. Kim, G. T. Kim and H. J. Lee:' Ex-situ plasma diagnosis by recognition of X-ray photoelectron spectroscopy data using a neural network', Mater. Manuf. Proc., 2008, 23, 528-532.
9. S. J. Hong, G. S. Gary and D. C. Park: 'Neural network modeling of reactive ion etching using optical emission spectroscopy data', IEEE Trans. Semicond. Manuf., 2003, 16, 598-608.
10. B. Kim and M. Kwon: 'Optimization of principal component analysis-applied in-situ spectroscopy data using neural networks and genetic algorithms', Appl. Spectrosc., 2008, 62, (1), 73-77. (Pubitemid 351321611)
11. M. A. Sobolewski: 'Real-time, noninvasive monitoring of ion energy and ion current at a wafer surface during plasma etching', J. Vac. Sci. Technol., 2006, 24, 1892-1904.
12. F. A. Bose, R. Patrick and H. Baltes: 'Measurement of discharge impedance for dry etch process control', Proc. SPIE, 1994, 2336, 101-110.
13. B. Kim and S. Kim: 'Room-temperature high radio-frequency power effects on silicon nitride films deposited by using a plasmaenhanced chemical vapor deposition', Met. Mater. Int., 2008, 14, 637-641.
14. D. E. Rummelhart and J. L. McClelland: 'Parallel Distributed Processing', Cambridge, MIT Press, 1986.
15. B. Kim and J. Bae: 'Prediction of plasma processes using neural network and genetic algorithm', Solid State Electron., 2005, 49, 1576-1580. (Pubitemid 41586527)