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Volumn 5, Issue 6, 2008, Pages 1589-1593

Anisotropic coalescence behaviors of GaN islands grown by metal-organic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE BEHAVIOR; EPITAXIAL LATERAL OVERGROWTH; GAN ISLANDS; HEXAGONAL ISLANDS; METALORGANIC CHEMICAL VAPOR DEPOSITION;

COALESCENCE; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SILICON COMPOUNDS;

SEMICONDUCTOR GROWTH;

EID: 77951236572 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778512 Document Type: Conference Paper

Times cited : (2)

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