Ozone and UV assisted oxidation of InN surfaces

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1603-1605

  Ecke, G ^a   Wang, Ch Y ^a   Cimalla, V ^a   Ambacher, O ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER MEASUREMENTS; AUGER PEAK; ELECTRON DEPLETION; GROWING SURFACES; HIGH ELECTRON CONCENTRATION; HIGH QUALITY; IN-FIELD; INDIUM OXIDE; INN LAYERS; OXIDATION PROCESS; OXYGEN CONCENTRATIONS; PEAK SHIFT; SIGNAL INTENSITIES; SURFACE ELECTRON; SURFACE MODIFICATION; UV IRRADIATION;

AUGERS; CHEMICAL MODIFICATION; CONCENTRATION (PROCESS); ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; INDIUM COMPOUNDS; NITRIDES; OXIDATION; OZONE; SURFACE TREATMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77951235094     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778519     Document Type: Conference Paper

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