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Volumn 57, Issue 6, 2006, Pages 354-359

Fermi level analysis of group III nitride semiconductor device structures by Auger peak position measurements

Author keywords

Auger electron spectroscopy; Auger peak position; Fermi level; Group III nitrides; Sputter depth profiling

Indexed keywords


EID: 33845663267     PISSN: 13353632     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (3)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.