Influence of oxygen/argon ratio on structural, electrical and optical properties of Ag-doped ZnO thin films

Journal of Crystal Growth

Volumn 312, Issue 11, 2010, Pages 1813-1816

  Deng, R ^a,b   Yao, B ^a,b   Li, Y F ^b   Yang, T ^a   Li, B H ^b   Zhang, Z Z ^b   Shan, C X ^b   Zhang, J Y ^b   Shen, D Z ^b  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

A1. X ray diffraction; A3. Magnetron sputtering; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

A1. X-RAY DIFFRACTION; A3. MAGNETRON SPUTTERING; AG FILMS; DOPED ZNO; ELECTRICAL AND OPTICAL PROPERTIES; FORMATION ENERGIES; HOMOJUNCTION; I - V CURVE; P TYPE ZNO; P-TYPE CONDUCTIVITY; QUARTZ SUBSTRATE; RADIO FREQUENCY MAGNETRON SPUTTERING; RICH CONDITIONS; SEMICONDUCTING II-VI MATERIALS; TURN ON VOLTAGE; ZNO;

ELECTRIC PROPERTIES; ELECTRIC RECTIFIERS; OPTICAL PROPERTIES; OXIDE MINERALS; QUARTZ; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

SILVER;

EID: 77951208509     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.02.042     Document Type: Article

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