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Volumn 157, Issue 5, 2010, Pages

Low droop nonpolar GaN/InGaN light emitting diode grown on m -plane GaN substrate

(8) Chang, Shih Pang a,b Lu, Tien Chang a Zhuo, Li Fu a Jang, Chung Ying a Lin, Da Wei a Yang, Hung Chih b Kuo, Hao Chung a Wang, Shing Chung a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b EPISTAR CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; CARRIER DENSITY; DC OPERATION; DEGREE OF POLARIZATION; EXTERNAL QUANTUM EFFICIENCY; GAN SUBSTRATE; GAN/INGAN; HIGH CURRENT DENSITIES; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; LED CHIPS; M-PLANE; NON-POLAR; NONPOLAR M-PLANE; OPERATION CURRENTS; POLARIZATION ANISOTROPY; POLARIZATION EFFECT; ROOM TEMPERATURE; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;

EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PHYSICAL OPTICS; POLARIZATION; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM EFFICIENCY;

EID: 77951202696 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3327909 Document Type: Article

Times cited : (21)

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