Laser-induced self organization of silicon-germanium hillocks for field emission displays

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 10, 2008, Pages 3239-3242

  Weizman, M ^a   Nickel, N H ^a   Sieber, I ^a   Yan, B ^b   Fostiropoulos, K ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNITED SOLAR OVONIC LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION PARAMETER; EMISSION THRESHOLD; GE CONTENT; LASER INDUCED; LOW FIELD; POLY-CRYSTALLINE SILICON; SELF-ORGANIZATION PHENOMENON; SELF-ORGANIZATIONS; SELF-ORGANIZED; SILICON GERMANIUM;

FIELD EMISSION; GERMANIUM; POLYSILICON; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SEMICONDUCTOR SWITCHES; TECHNICAL PRESENTATIONS; THERMAL CONDUCTIVITY;

FIELD EMISSION DISPLAYS;

EID: 77951165358     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779511     Document Type: Conference Paper

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