InP/InGaAs photodetector on SOI circuitry

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2009, Pages 214-216

  Binetti, P R A ^a   Leijtens, X J M ^a   De Vries, T ^a   Oei, Y S ^a   Di Cioccio, L ^b   Fedeli, J M ^b   Lagahe, C ^c   Van Campenhout, J ^d   Van Thourhout, D ^d   Van Veldhoven, P J ^a   Notzel R ^a   Smit, M K ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b CEA LETI   (France)

^c TRACIT Technologies   (France)

^d GHENT UNIVERSITY   (Belgium)

Author keywords

Ingaas inp; Optical interconnects; Photodetector

Indexed keywords

3 DB BANDWIDTH; FUTURE GENERATIONS; INGAAS/INP; INP; INP/INGAAS; PHOTONIC CIRCUITS; PHOTONIC DEVICE FABRICATION; RESPONSIVITY; SOI WAFERS; WAFER-SCALE PROCESSING;

INTEGRATED OPTICS; OPTICAL INTERCONNECTS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONIC DEVICES; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 77951044400     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2009.5338390     Document Type: Conference Paper

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