Light extraction enhancement of a GaN-based light-emitting diode through grating-patterned photoelectrochemical surface etching with phase mask interferometry

IEEE Photonics Technology Letters

Volumn 22, Issue 9, 2010, Pages 640-642

  Lin, Cheng Hung ^a   Chen, Cheng Yen ^a   Yeh, Dong Ming ^a   Yang, Chih Chung ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Light extraction; Light emitting diode (LED); Photoelectrochemical (PEC) etching

Indexed keywords

ETCHING RATE; FRINGE PATTERN; GAN-BASED LIGHT-EMITTING DIODES; GRATING STRUCTURES; LIGHT EXTRACTION; PHASE MASKS; PHOTOELECTROCHEMICAL ETCHING; PHOTOELECTROCHEMICALS; RESISTANCE CHARACTERISTICS; SURFACE ETCHING; SURFACE GRATING STRUCTURES; UV LIGHT;

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; INTERFEROMETRY; LIGHT; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); SURFACE STRUCTURE; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 77951020302     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2043093     Document Type: Article

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