Core level photoelectron spectroscopy of LiGaS2 and Ga-S bonding in complex sulfides

Journal of Alloys and Compounds

Volumn 497, Issue 1-2, 2010, Pages 244-248

  Atuchin, V V ^a   Isaenko, L I ^b   Kesler, V G ^c   Lobanov, S I ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b SOBOLEV INSTITUTE OF GEOLOGY AND MINERALOGY   (Russian Federation)

^c Institute of Semiconductor Physics   (Russian Federation)

Author keywords

Bonding; Crystal growth; Electronic properties; Optical materials; XPS

Indexed keywords

COMPLEX SULFIDE; CORE LEVELS; CORE-LEVEL PHOTOELECTRON SPECTROSCOPY; ELECTRONIC PARAMETERS; IONICITIES; SPECTRAL FEATURE; SULFUR ATOMS; THIOGALLATE; VALENCE ELECTRON; XPS;

BINDING ENERGY; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRONIC PROPERTIES; GALLIUM; GRAIN BOUNDARIES; LITHIUM; MATERIALS PROPERTIES; OPTICAL MATERIALS; OPTICAL PROPERTIES; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SULFUR;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77950957768     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.03.020     Document Type: Article

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