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Applied Physics A: Materials Science and Processing

Volumn 94, Issue 2, 2009, Pages 315-320

Electronic properties of orthorhombic LiGaS2 and LiGaSe 2

(6) Reshak, Ali H a Auluck, S b Kityk, I V c Al Douri, Y d Khenata, R e Bouhemadou, A f

a UNIVERSITY OF SOUTH BOHEMIA (Czech Republic)

b INDIAN INSTITUTE OF TECHNOLOGY KANPUR (India)

c SILESIAN UNIVERSITY OF TECHNOLOGY (Poland)

d UNIVERSITY MALAYSIA PERLIS (Malaysia)

e UNIVERSITÉ DE MASCARA (Algeria)

f FERHAT ABBAS UNIVERSITY (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ENZYMES; GALLIUM; LITHIUM;

DENSITY OF STATES; ENERGY BAND GAPS; FERMI ENERGIES; FP-LAPW; FULL POTENTIAL LINEAR AUGMENTED PLANE WAVES; PARTIAL DENSITY OF STATES; THEORETICAL CALCULATIONS;

DENSITY FUNCTIONAL THEORY;

EID: 57249110681 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4794-6 Document Type: Article

Times cited : (30)

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