Electronic structure of LiGaS2

Solid State Communications

Volumn 149, Issue 13-14, 2009, Pages 572-575

  Atuchin, V V ^a   Isaenko, L I ^b   Kesler, V G ^c   Lobanov, S ^b   Huang, H ^d,f   Lin, Z S ^d,e  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b SOBOLEV INSTITUTE OF GEOLOGY AND MINERALOGY   (Russian Federation)

^c Institute of Semiconductor Physics   (Russian Federation)

^d TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^f UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

D. Electronic band structure; E. Photoelectron spectroscopies

Indexed keywords

BAND STRUCTURE; CRYSTALS; ELECTRON SPECTROSCOPY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SINGLE CRYSTAL SURFACES; SPECTRUM ANALYSIS; THREE DIMENSIONAL; VALENCE BANDS;

D. ELECTRONIC BAND STRUCTURE; DENSITY-FUNCTIONAL CALCULATIONS; E. PHOTOELECTRON SPECTROSCOPIES; EXPERIMENTAL MEASUREMENTS; LDA + U METHODS; NON-LINEAR OPTICAL COEFFICIENTS; VALENCE BAND STRUCTURES; X-RAY PHOTOELECTRON SPECTROSCOPIES; XPS SPECTRUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 59649089283     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.12.048     Document Type: Article

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