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Volumn 21, Issue 16, 2010, Pages
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Effects of transport gradients in a chemical vapor deposition reactor employing vapor-liquid-solid growth of ternary chalcogenide phase-change materials
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Author keywords
[No Author keywords available]
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Indexed keywords
AXIAL DIRECTION;
CHEMICAL VAPOR DEPOSITION REACTORS;
COMPUTATIONAL FLUID DYNAMICS SIMULATIONS;
CVD SYNTHESIS;
FLOW CONDITION;
GROWTH CONDITIONS;
GROWTH PRODUCTS;
GROWTH SUBSTRATES;
INHOMOGENEITIES;
MEMORY STORAGE;
NANOWIRE ARRAYS;
RADIAL DIRECTION;
SIMULATION DATA;
TERNARY CHALCOGENIDES;
VAPOR-LIQUID-SOLID GROWTH;
VLS GROWTH;
COMPUTATIONAL FLUID DYNAMICS;
GERMANIUM;
GROWTH (MATERIALS);
LIQUIDS;
MORPHOLOGY;
NANOWIRES;
PHASE CHANGE MATERIALS;
STOICHIOMETRY;
SYNTHESIS (CHEMICAL);
TELLURIUM COMPOUNDS;
THREE DIMENSIONAL;
VAPORS;
CHEMICAL VAPOR DEPOSITION;
CHALCOGEN;
NANOMATERIAL;
ARTICLE;
CHEMISTRY;
CONFORMATION;
CRYSTALLIZATION;
INSTRUMENTATION;
MACROMOLECULE;
MATERIALS TESTING;
METHODOLOGY;
NANOTECHNOLOGY;
PARTICLE SIZE;
PHASE TRANSITION;
SURFACE PROPERTY;
ULTRASTRUCTURE;
CHALCOGENS;
CRYSTALLIZATION;
MACROMOLECULAR SUBSTANCES;
MATERIALS TESTING;
MOLECULAR CONFORMATION;
NANOSTRUCTURES;
NANOTECHNOLOGY;
PARTICLE SIZE;
PHASE TRANSITION;
SURFACE PROPERTIES;
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EID: 77950503471
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/21/16/165604 Document Type: Article |
Times cited : (4)
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References (16)
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