Emission sensitization and mechanisms of electron-excitation migration in structures based on III-nitrides doped with rare-earth elements (Eu, Er, Sm)

Semiconductors

Volumn 44, Issue 3, 2010, Pages 321-328

  Mezdrogina, M M ^a   Danilovsky, E Yu ^a   Kuzmin, R V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77950491932     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782610030097     Document Type: Article

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