High speed 1.1-μm-range InGaAs-based VCSELs

IEICE Transactions on Electronics

Volumn E92-C, Issue 7, 2009, Pages 942-950

  Suzuki, Naofumi ^a   Anan, Takayoshi ^a   Hatakeyama, Hiroshi ^a   Fukatsu, Kimiyoshi ^a   Yashiki, Kenichiro ^a   Tokutome, Keiichi ^a   Akagawa, Takeshi ^a   Tsuji, Masayoshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

High speed modulation; Optical interconnections; Semiconductor lasers; Tunnel junction; Vertical cavity surface emitting lasers (VCSELS)

Indexed keywords

MODULATION; OPTICAL INTERCONNECTS; SEMICONDUCTING INDIUM; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR LASERS; TRANSCEIVERS; TUNNEL JUNCTIONS;

BARRIER LAYERS; ERROR FREE OPERATIONS; HIGH RELIABILITY; HIGH-SPEED MODULATION; MODULATION BANDWIDTH; OPERATION TEMPERATURE; RELAXATION OSCILLATION FREQUENCIES; TEMPERATURE CHARACTERISTIC;

SURFACE EMITTING LASERS;

EID: 77950400961     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E92.C.942     Document Type: Article

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